sa2b-e3, sa2d-e3, sa2g-e3, sa2j-e3, sa2k-e3, SA2M-E3 www.vishay.com vishay general semiconductor revision: 14-aug-13 1 document number: 88969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics i f(av) 2.0 a v rrm 100 v, 200 v, 400 v, 600 v, 800 v, 1000 v i fsm 55 a i r 3.0 a v f at i f = 2.0 a 0.854 v t j max. 150 c package do-214ac (sma) diode variatio ns single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol sa2b sa2d sa2g sa2j sa2k sa2m unit device marking code 2b 2d 2g 2j 2k 2m max. repetitive pe ak reverse voltage v rrm 100 200 400 600 800 1000 v average forward current i f(av) 2.0 a peak forward surge curr ent 10 ms single half ? sine-wave superimposed on rated load i fsm 55 a operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 1.0 a t j = 25 c v f (1) 0.911 - v i f = 2.0 a 0.954 1.1 i f = 1.0 a t j = 125 c 0.805 - i f = 2.0 a 0.854 0.95 reverse current rated v r t j = 25 c i r (2) 0.19 3 a t j = 125 c 28 90 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 1.5 - s typical junction capa citance 4.0 v, 1 mhz c j 11 - pf
sa2b-e3, sa2d-e3, sa2g-e3, sa2j-e3, sa2k-e3, SA2M-E3 www.vishay.com vishay general semiconductor revision: 14-aug-13 2 document number: 88969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambien t and from junction to lead , pcb mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - max. forward current derating curve fig. 2 - forward power loss characteristics fig. 3 - max. non-repetitive peak forward surge current fig. 4 - typical instantaneous forward characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol sa2b sa2d sa2g sa2j sa2k sa2m unit typical thermal resistance r ? ja (1) 80 c/w r ? jl (1) 12 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sa2j-e3/61t 0.064 61t 1800 7" diamet er plastic tape and reel sa2j-e3/5at 0.064 5at 7500 13" di ameter plastic tape and reel 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 175 average forwar d rectified current (a) lead temperature (c) lead temperature re s i s tive or inductive load ambient temperature p.c.b. mounted on 0.79 " x 0.79 " (20 mm x 20 mm) copper pad area s 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0 0 0.5 average po wer l o ss (w) average forwar d current (a) d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 8.3 m s s ingle half s ine-wave 110 70 10 20 30 40 50 60 0 100 number of cycle s at 50 hz peak forwar d s urge current (a) 10 1 0.1 0.5 0.7 0.9 1.1 1.3 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c
sa2b-e3, sa2d-e3, sa2g-e3, sa2j-e3, sa2k-e3, SA2M-E3 www.vishay.com vishay general semiconductor revision: 14-aug-13 3 document number: 88969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse leakage characteristics fig. 6 - typical j unction capacitance fig. 7 - typical transient thermal impedance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) 1000 100 10 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 125 c t j = 25 c 100 100 10 10 1 1 0.1 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 100 10 1 0.1 10 1 0.01 1000 100 t - pul s e duration ( s ) junction to ambient tran s ient thermal impedance (c/w) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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